Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Taiwanese chip giant to repurpose Hsinchu fab due to rising price pressure from Chinese rivals According to various reports,Taiwanese chip giant TSMC will wind down its GaN wafer foundry services by ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

To fabricate their devices, Li and co-workers began by using pulsed laser deposition (PLD) to grow a roughly 50 nm-thick film ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...