The University of Sheffield has won a £7 million investment from the UK's Engineering and Physical Sciences Council (EPRSC) ...

The VO1401AEFTR and VOR1003M4T combine high continuous load current of 550 mA and 5 A, respectively, with load voltages of 60 ...

A team of UK scientists at Queen Mary University of London, University of Nottingham and University of Glasgow has received a ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Infineon has launched its new CoolSiC MOSFET 750 V G2 technology, designed to deliver improved system efficiency and ...

Finland-based Beneq has announced that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8 inch GaN-on-Si wafers by a Tier 1 GaN power device ...

As III-V Epi celebrates its fifth birthday, the UK-based company says it has demonstrated consistent growth, establishing its ...

SMD Semiconductor, a wholly owned entity of the Sarawak Government, will be located at the Compound Semiconductor ...

The partnership combines Partstat's expertise in inventory management and storage with WIN's semiconductor manufacturing ...

IceGaN is a form of smart power HEMT that features advanced sensing and protection capabilities. According to Daniel Murphy, ...

Ontario-based VueReal, developer of MicroSolid Printing (a cartridge-based platform that transfers millions of ...

Navitas Semiconductor has announced a new family of GaNSense motor drive ICs targeting home appliances and industrial drives ...