Abstract: Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break ...

VIJAYAWADA: The world can witness the arrival of a groundbreaking, gate-all-around nanosheet transistor technology, poised to bring revolutionary advancements in the field of artificial ...

Enphase Energy has been granted a patent for an apparatus designed for substrate voltage management in bidirectional gallium nitride high electron mobility transistors. The active circuit controls ...

Now the brain is back to some extent, I noticed a whole genre of transistor that I was ignorant of, and it seems to solve one of the short comings of the bargain-basement pulse-generator output buffer ...

IBM showed off how well nanosheet transistors hold up using liquid nitrogen, which can get as low as -196 °C, during the IEEE International Electron Device Meeting (IEDM) in San Francisco.

What just happened? IBM's concept nanosheet transistor demonstrated nearly double the performance improvement at the boiling point of nitrogen. This achievement is expected to result in several ...

Nanosheets are a sort of gate-all-around field-effect transistor (GAAFET) in which a gate surrounds floating transistor fins. TSMC will deploy nanosheets in their 2nm process, which will go into ...

A line drawing of the Internet Archive headquarters building façade. An illustration of a magnifying glass. An illustration of a magnifying glass.

According to a patent that has recently surfaced online, Team Blue could use "stacked forksheet" transistors to keep Moore's Law alive. By now it's no secret that Intel has been on a cultural ...