When visiting the dentist, you might remember being poked and prodded by a thin metal instrument to check your teeth and gums ...

Infineon’s rad-hard GaN HEMT is the first in-house device qualified to JANS MIL-PRF-19500/794, DLA’s highest quality grade.

A recent technical paper titled “Factors determining bond wave speed in wafer bonding” was published by researcher at ...

on-wafer measurements of Si electronic devices. To present the guideline, a 3D electromagnetic (EM) simulation is carried out extensively using a realistic EM model of a commercial RF probe. First ...

FORT WORTH, Texas – Last week’s PGA Championship was the final event in a five-week, seven-tournament test period that allowed players to use distance-measuring devices during competition rounds in an ...

Abstract: A small-size inductive-coupling dc voltage transceiver for highly-parallel wafer-level testing is experimentally demonstrated in 90-nm CMOS technology, which can reduce the total cost of a ...

NY CREATES and Fraunhofer IPMS will embark on a joint development project for the co-development of advanced memory devices built at the 300mm wafer scale, the platform upon which chips are made. In ...

DES MOINES — An Iowa lawmaker says state investigators monitored mobile devices at the Iowa Capitol ... DCI and other officials over the sports betting probe. Iowa lawmakers legalized online ...

NY CREATES and Fraunhofer IPMS will embark on a joint development project for the co-development of advanced memory devices built at the 300 mm wafer scale, the platform upon which chips are made. In ...