Expansion into North America marks a major milestone for the UK-based RF Precision engineering company.

Abstract: In this work, we report a RF power amplifier behavioural model with temperature effects suitable for predicting the long-term memory effects in standalone and multiple-PA arrays. The model ...

Abstract: In this work, a standard four-metal layer, Indigenous 180nm Digital CMOS Process is chosen for the design of an inductorless wideband differential RF-Amplifier to overcome the limitations of ...