Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.
After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size ...
A new technical paper titled “Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts” was published by researchers at National Yang Ming Chiao Tung University. “This ...
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