Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...
The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...
Cissoid is broadening its range of standard products with multiple new families of power modules. Designed to address the growing demand for robust, efficient, and flexible solutions in automotive, ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...
NUREMBERG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today introduced the ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...
TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...
A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.
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