Mitsubishi Electric has announced a new generation of 1.2kV IGBT (insulated gate bipolar transistor) modules that, it says, ...
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...
TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage ...
Researchers at the Manisa Celal Bayar University in Turkey have proposed using a skived-type aluminum heat sink (HS) to cool insulated gate bipolar transistor (IGBT) arrays in solar PV inverters.
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...
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