IXYS announced an expansion of its 650 V XPT IGBT product portfolio. IXYS announced an expansion of its 650 V XPT IGBT product portfolio. With current ratings ranging from 16 A to 200 A, these new ...

The FGA20S125P is a shorted-anode IGBT by Fairchild Semiconductor that has on characteristics of Gate-Emitter Threshold Voltage (VGEth) range of 4.5 – 7.5 V and Diode Forward Voltage (VFM) range of ...

For inverter applications, such as motor drives, uninterruptible power supplies, switchmode power supplies, high intensity lamp ballasts, and induction heating, the gates of insulated gate bipolar ...

It has been assumed that we are approaching the performance limits of silicon-based power electronics. Researchers have now challenged this belief by developing a miniaturized silicon insulated gate ...

Modern high speed insulated gate bipolar transistor (IGBT) applications in switchmode power supply (SMPS) circuits provide considerable cost, current density, and on-state voltage advantage. However, ...

NUREMBERG, Germany--(BUSINESS WIRE)--Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, is slashing energy loss by 30 percent for its 4 th generation 650V ...

AgileSwitch, LLC announced today that it has received funding from Ben Franklin Technology Partners (BFTP) of Southeastern Pennsylvania for design, development and testing of Advanced Power Conversion ...