A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...
SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback