Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
For example, if a MOSFET in an SO8 package (θ JD = 15°C/W) dissipates a P j of 1 W and must maintain a junction temperature below 125°C, then the measured drain temperature must not exceed 110°C ...
Dealing with the inevitable heat dissipation of a discrete power transistor such as a MOSFET is an ongoing engineering problem. In many cases, a heatsink is the solution: the better the heatsink, the ...
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